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FDC6333C Datasheet

Part Number FDC6333C
Manufacturers On Semiconductor
Logo On Semiconductor
Description N- & P-Channel Power MOSFET
Datasheet FDC6333C DatasheetFDC6333C Datasheet (PDF)

MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • Q1 2.5 A, 30 V ♦ RDS(on) = 9.

  FDC6333C   FDC6333C






Part Number FDC6333C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N & P-Channel PowerTrench MOSFETs
Datasheet FDC6333C DatasheetFDC6333C Datasheet (PDF)

FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. .

  FDC6333C   FDC6333C







N- & P-Channel Power MOSFET

MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • Q1 2.5 A, 30 V ♦ RDS(on) = 95 mW @ VGS = 10 V ♦ RDS(on) = 150 mW @ VGS = 4.5 V • Q2 −2.0 A, −30 V ♦ RDS(on) = 130 mW @ VGS = −10 V ♦ RDS(on) = 220 mW @ VGS = −4.5 V • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than SO−8); Low Profile (1 mm Thick) • This is a Pb−Free Device Applications • DC−DC Converter • Load Switch • LCD Display Inverter DATA SHEET www.onsemi.com VDSS RDS(ON) MAX ID MAX Q1 30 V 95 mW @ 10 V 2.5 A 150 mW @ 4.5 V Q2 −30 V 130 mW @ −10 V −2.0 A 220 mW @ −4.5 V Pin 1 TSOT−23−6 CASE 419BL MARKING DIAGRAM 333 MG G 1 333 = Specific Device Code M = Assembly Operation Month G = Pb−Free Package (Note: Microdot may be in either location) PINOUT Q2(P) 4 3 5 2 6 1 Q1(N) ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2001 1 March, 2022 − Rev. 5 Publication Order Number: FDC6333C/D FDC6333C ABSOLUTE MAX.


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