FDC638APZ

FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET –20V, –4.5A, 43mΩ Features „ Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A „ Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A „ Low gate charge (8nC typical). „ High performance trench technology for extremely low rDS(on). „ SuperSOTTM –6 package:small footprint (72% smaller than standard SO–8) low profile (1mm thick). „ RoHS Compliant General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. Application „ DC - DC Conversion S D D www.DataSheet4U.com D 1 2 3 3 6 D G D Pin 1 D D 5 4 D G S SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±12 –4.5 –20 1.6 0.8 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 °C/...