DatasheetsPDF.com

FDC642 PowerTrenchMOSFET Datasheet PDF

P-Channel 2.5V Specified PowerTrenchMOSFET

P-Channel 2.5V Specified PowerTrenchMOSFET

 

 

 

Part Number FDC642
Description P-Channel 2.5V Specified PowerTrenchMOSFET
Feature FDC642P July 1999 FDC642P P-Channel 2.
5V Specified PowerTrenchTM MOSFET Gener al Description This P-Channel 2.
5V spec ified MOSFET is produced using Fairchil d's advanced PowerTrench process that h as been especially tailored to minimize on-state resistance and yet maintain l ow gate charge for superior switching p erformance.
These devices have been des igned to offer exceptional power dissip ation in a very small footprint for app lications where the larger packages are impractical.
Features • • • • • -4 A, -20 V.
RDS(ON) = 0.
065 Ω @ VGS = -4.
5 V RDS(ON) = 0.
100 Ω @ VGS = -2 .
5 V Fast switching spe .
Manufacture Fairchild Semiconductor
Datasheet
Download FDC642 Datasheet

FDC642

 

 

 


 

 

 

Part Number FDC642P_F085
Description P-Channel PowerTrench MOSFET
Feature FDC642P_F085 P-Channel PowerTrench® MOS FET FDC642P_F085 P-Channel PowerTrench ® MOSFET -20V, -4A, 100mΩ Features „ Typ rDS(on) = 52.
5mΩ at VGS = -4.
5 V, ID = -4A „ Typ rDS(on) = 75.
3mΩ a t VGS = -2.
5V, ID = -3.
2A „ Fast switc hing speed „ Low gate charge(6.
9nC typ ical) „ High performance trench techno logy for extremely low rDS(on) „ Super SOTTM-6 package:small footprint(72% sma ller than standard SO-8);low profile(1m m thick).
„ RoHS Compliant „ Qualifie d to AEC Q101 Applications „ Load swi tch „ Battery protection „ Power mana gement June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©200 .
Manufacture Fairchild Semiconductor
Datasheet
Download FDC642P_F085 Datasheet

FDC642P_F085

 

 

 


 

 

 

Part Number FDC642P-F085P
Description P-Channel MOSFET
Feature MOSFET – P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F08 5P Features
• Typ RDS(on) = 52.
5 mW a t VGS = −4.
5 V, ID = −4 A
• Typ R DS(on) = 75.
3 mW at VGS = −2.
5 V, ID = −3.
2 A
• Fast Switching Speed
• Low Gate Charge (6.
9 nC Typical)
• H igh Performance Trench Technology for E xtremely Low RDS(on)
• SUPERSOTt−6 Package: Small Footprint (72% Smaller t han Standard SO−8); Low Profile (1 mm Thick)
• AEC−Q101 Qualified and PP AP Capable
• This Device is Pb−Free and is RoHS Compliant Applications
• Load Switch
• Battery Protection
• Power management www.
onsemi.
com TSOT2 3 6−Lead CASE 4 .
Manufacture ON Semiconductor
Datasheet
Download FDC642P-F085P Datasheet

FDC642P-F085P

 

 

 

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)