FDC642P-F085

MOSFET – P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A Fast Switching Speed Low Gate Charge (6.9 nC Typical) High Performance Trench Technology for Extremely Low RDS(on) SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant Applications Load Switch Battery Protection Power management www.onsemi.com TSOT23 6−Lead CASE 419BL MARKING DIAGRAM &E&Y &.642&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Production &. = Pin One Identifier G = Pb−Free Package PINOUT S4 D5 D6 3G 2D 1D SuperSOTTM−6 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 September, 2020 − Rev. 3 Publication Order Number: FDC642P−F085/D FDC642P−F085, FDC642P−F085P MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (VGS = 4.5 V) − Pulsed −20 V ±8 V A −4 −20 EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation 72 mJ 1.2 W TJ, TSTG Operating and Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device...