FDC642P
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specif...
FDC642P
July 1999
FDC642P
P-Channel 2.5V Specified PowerTrenchTM
MOSFET
General Description
This P-Channel 2.5V specified
MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
Features
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Applications Load switch Battery protection Power management
D D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3 4
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source
Voltage Gate-Source
Voltage Drain Current Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1) (Note 1a) (Note 1a) (Note 1b)
Units
V V A W °C
±8 -4 -20 1.6 0.8 -55 to +150
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Outlines and Ordering Information
Device Ma...