FDC655BN

MOSFET – Single, N-Channel, Logic Level, POWERTRENCH) 30 V, 6.3 A, 25 mW FDC655BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A Fast Switching Low Gate Charge High Performance Trench Technology for Extremely Low RDS(ON) This Device is Pb−Free, Halide Free and is RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID −Continuous TA = 25°C (Note 1a) 6.3 A −Pulsed 20 PD Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Max Unit RqJA Thermal Resistance, Junction to Ambient 78 (Note 1a) °C/W DATA SHEET www.onsemi.com VDSS 30 V RDS(ON) MAX 25 mW @ 10 V 33 mW @ 4.5 V ID MAX 6.3 A S...