FDD10AN06A0-F085

FDD10AN06A0-F085 N-Channel PowerTrench® MOSFET FDD10AN06A0-F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A Qg(tot) = 28nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82560 DRAIN (FLANGE) D GATE SOURCE G TO-252AA FDD SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 115oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 50 11 Figure 4 429 135 0.9 -55 to 175 1.11 100 52 Units V V A A A mJ W W/oC oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at...