FDD3510H Dual N & P-Channel PowerTrench® MOSFET
April 2008
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
Features
Q1...
FDD3510H Dual N & P-Channel PowerTrench®
MOSFET
April 2008
FDD3510H
Dual N & P-Channel PowerTrench®
MOSFET
Features
Q1: N-Channel Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A 100% UIL Tested RoHS Compliant
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ General Description
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Applications
Inverter H-Bridge
D1 D1/D2
D2
G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel
G2
S2 P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source
Voltage Gate to Source
Voltage Drain Current - Continuous - Continuous - Pulsed Power Dissipation for Single Operation PD EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TC = 25°C (Note 1) TA = 25°C (Note 1a) TA = 25°C (Note 1b) (Note 3) 37 TC = 25°C TA = 25°C Q1 80 ±20 13.9 4.3 20 35 3.1 1.3 54 mJ °C -55 to +150 Q2 -80 ±20 -9.4 -2.8 -10 32 W A Units V V
Thermal Characteristics
RθJC RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) (Note 1) 3.5 3.9 °C/W
Pac...