FDD4685

FDD4685 40V P-Channel PowerTrench® MOSFET March 2015 FDD4685 40V P-Channel PowerTrench® MOSFET –40V, –32A, 27mΩ Features General Description „ Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A „ Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application. Application „ Inverter „ Power Supplies G S D DT O- P-2A5K2 (T O -25 2) S G D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package Limited) -Continuous(Silicon Limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C TC= 25°C TA= 25°C TC= 25°C Thermal Characteristics (Note 1) (Note 1a) (Note 3) (Note 1a) Ratings –40 ±20 –32 –40 –8.4 –100 121 69 3 –55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.8 (Note 1a) 40 °C/W Device Marking FDD4685 Device FDD4685 Package D-PAK(TO-252) Reel Size 13’’ Tape Width 16mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation 1 FDD4685 Rev. 1.3 www.fairchi...