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FDD4685 MOSFET Datasheet PDF

P-Channel PowerTrench MOSFET

P-Channel PowerTrench MOSFET

 

 

 

Part Number FDD4685
Description P-Channel PowerTrench MOSFET
Feature www.
DataSheet4U.
com FDD4685 40V P-Chann el PowerTrench® MOSFET October 2006 FDD4685 40V P-Channel PowerTrench® MOS FET –40V, –32A, 27mΩ Features Gen eral Description This P-Channel MOSFET has been produced using Fairchild Semic onductor’s proprietary PowerTrench® technology to deliver low rDS(on) and g ood switching characteristic offering s uperior performance in application.
„ Max rDS(on) = 27mΩ at VGS = –10V, I D = –8.
4A „ Max rDS(on) = 35mΩ at VGS = –4.
5V, ID = –7A „ High perfo rmance trench technology for extremely low rDS(on) „ RoHS Compliant tm Appl ication „ Inverter „ Power Supplies S G .
Manufacture Fairchild Semiconductor
Datasheet
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FDD4685

 

 

 


 

 

 

Part Number FDD4685_F085
Description P-Channel PowerTrench MOSFET
Feature FDD4685_F085 P-Channel PowerTrench® MOS FET FDD4685_F085 P-Channel PowerTrench ® MOSFET -40V, -32A, 35mΩ Features Typ rDS(on) = 23mΩ at VGS = -10V, ID = -8.
4A „ Typ rDS(on) = 30mΩ at VGS = -4.
5V, ID = -7A „ Typ Qg(TOT) = 19nC at VGS = -5V „ High performance trenc h technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q 101 Applications „ Inverter „ Power Supplies December 2010 ©2010 Fairchi ld Semiconductor Corporation FDD4685_F0 85 Rev.
C 1 www.
fairchildsemi.
com FD D4685_F085 P-Channel PowerTrench® MOSF ET MOSFET Maximum Ratings TC = 25°C u nless otherwise noted Symbol .
Manufacture Fairchild Semiconductor
Datasheet
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FDD4685_F085

 

 

 


 

 

 

Part Number FDD4685
Description P-Channel PowerTrench MOSFET
Feature www.
DataSheet4U.
com FDD4685 40V P-Chann el PowerTrench® MOSFET October 2006 FDD4685 40V P-Channel PowerTrench® MOS FET –40V, –32A, 27mΩ Features Gen eral Description This P-Channel MOSFET has been produced using Fairchild Semic onductor’s proprietary PowerTrench® technology to deliver low rDS(on) and g ood switching characteristic offering s uperior performance in application.
„ Max rDS(on) = 27mΩ at VGS = –10V, I D = –8.
4A „ Max rDS(on) = 35mΩ at VGS = –4.
5V, ID = –7A „ High perfo rmance trench technology for extremely low rDS(on) „ RoHS Compliant tm Appl ication „ Inverter „ Power Supplies S G .
Manufacture Fairchild Semiconductor
Datasheet
Download FDD4685 Datasheet

FDD4685

 

 

 

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