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FDD8451 Datasheet

Part Number FDD8451
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD8451 DatasheetFDD8451 Datasheet (PDF)

  FDD8451   FDD8451
FDD8451 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8451 N-Channel PowerTrench® MOSFET 40V, 28A, 24m: Features General Description „ Max rDS(on) 24m: at VGS = 10V, ID = 9A „ Max rDS(on) 30m: at VGS = 4.5V, ID = 7A „ Low gate charge „ Fast Switching „ High performance trench technology for extremely low rDS(on) „ RoHS compliant AD FREE I This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on). Application „ DC/DC converter „ Backlight inverter LE D G MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous@TC=25°C ID -Continuous @TA=25°C -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature T.






Part Number FDD8453LZ_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Datasheet FDD8451 DatasheetFDD8453LZ_F085 Datasheet (PDF)

  FDD8451   FDD8451
FDD8453LZ_F085 N-Channel Power Trench® MOSFET FDD8453LZ_F085 N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ Aug 2012 Features „ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A „ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A „ HBM ESD protection level > 7kv typical „ RoHS Compliant „ Qualified to AEC Q101 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ Inverter „ Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev..






Part Number FDD8453LZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Datasheet FDD8451 DatasheetFDD8453LZ Datasheet (PDF)

  FDD8451   FDD8451
FDD8453LZ N-Channel PowerTrench® MOSFET March 2015 FDD8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 6.7mΩ Features „ Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A „ HBM ESD protection level >7kV typical (Note 4) „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ Inverter „ Synchronous Rectifier D G S D DT O- P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID.






N-Channel MOSFET

FDD8451 N-Channel PowerTrench® MOSFET MPLEMENTATION March 2015 FDD8451 N-Channel PowerTrench® MOSFET 40V, 28A, 24m: Features General Description „ Max rDS(on) 24m: at VGS = 10V, ID = 9A „ Max rDS(on) 30m: at VGS = 4.5V, ID = 7A „ Low gate charge „ Fast Switching „ High performance trench technology for extremely low rDS(on) „ RoHS compliant AD FREE I This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on). Application „ DC/DC converter „ Backlight inverter LE D G MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous@TC=25°C ID -Continuous @TA=25°C -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics (Note 1a) (Note 3) RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient RTJA Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) Device Marking FDD8451 Device FDD8451 Package D-PAK(TO-252) Reel Size 13’’ S Ratings 40 ±20 28 9 78 20 30 -55 to 150 Units V V A mJ W °C 4.1 °C/W 40 °C/W 96 °C/W Tape Width 16mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation 1.



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