FDD8451 Datasheet
Part Number |
FDD8451 |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
FDD8451 Datasheet (PDF) |
FDD8451 N-Channel PowerTrench® MOSFET
MPLEMENTATION
March 2015
FDD8451 N-Channel PowerTrench® MOSFET
40V, 28A, 24m:
Features
General Description
Max rDS(on) 24m: at VGS = 10V, ID = 9A Max rDS(on) 30m: at VGS = 4.5V, ID = 7A Low gate charge
Fast Switching
High performance trench technology for extremely low
rDS(on) RoHS compliant
AD FREE I
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).
Application
DC/DC converter
Backlight inverter
LE
D
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous@TC=25°C
ID
-Continuous @TA=25°C
-Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature
T.
Part Number |
FDD8453LZ_F085 |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
N-Channel Power Trench MOSFET |
Datasheet |
FDD8453LZ_F085 Datasheet (PDF) |
FDD8453LZ_F085 N-Channel Power Trench® MOSFET
FDD8453LZ_F085
N-Channel Power Trench® MOSFET
40V, 50A, 6.5mΩ
Aug 2012
Features
Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A HBM ESD protection level > 7kv typical RoHS Compliant
Qualified to AEC Q101
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added
to enhance ESD voltage level.
Applications
Inverter Synchronous Rectifier
Package
D G
S D-PAK
(TO-252)
©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev..
Part Number |
FDD8453LZ |
Manufacturers |
Fairchild Semiconductor |
Logo |
|
Description |
N-Channel Power Trench MOSFET |
Datasheet |
FDD8453LZ Datasheet (PDF) |
FDD8453LZ N-Channel PowerTrench® MOSFET
March 2015
FDD8453LZ
N-Channel PowerTrench® MOSFET
40V, 50A, 6.7mΩ
Features
Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A HBM ESD protection level >7kV typical (Note 4)
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
Inverter
Synchronous Rectifier
D
G S
D
DT O- P-2A5K2 (TO-252)
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID.
N-Channel MOSFET
FDD8451 N-Channel PowerTrench® MOSFET
MPLEMENTATION
March 2015
FDD8451 N-Channel PowerTrench® MOSFET
40V, 28A, 24m:
Features
General Description
Max rDS(on) 24m: at VGS = 10V, ID = 9A Max rDS(on) 30m: at VGS = 4.5V, ID = 7A Low gate charge
Fast Switching
High performance trench technology for extremely low
rDS(on) RoHS compliant
AD FREE I
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).
Application
DC/DC converter
Backlight inverter
LE
D
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous@TC=25°C
ID
-Continuous @TA=25°C
-Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature
Thermal Characteristics
(Note 1a) (Note 3)
RTJC RTJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
RTJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a) (Note 1b)
Device Marking FDD8451
Device FDD8451
Package D-PAK(TO-252)
Reel Size 13’’
S
Ratings 40 ±20 28 9 78 20 30
-55 to 150
Units V V
A
mJ W °C
4.1
°C/W
40
°C/W
96
°C/W
Tape Width 16mm
Quantity 2500 units
©2009 Fairchild Semiconductor Corporation
1.
2006-11-20 : BAS16LP 1N4448HLP BC847BLP BC857BLP PMP4501G PMP4501Y PMP5201G PMP5201Y PMP4201G PMP4201Y