FDD8453LZ_F085

FDD8453LZ_F085 N-Channel Power Trench® MOSFET FDD8453LZ_F085 N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ Aug 2012 Features „ Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A „ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A „ HBM ESD protection level > 7kv typical „ RoHS Compliant „ Qualified to AEC Q101 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications „ Inverter „ Synchronous Rectifier Package D G S D-PAK (TO-252) ©2012 Fairchild Semiconductor Corporation FDD8453LZ_F085 Rev. C1 Symbol D G S 1 www.fairchildsemi.com FDD8453LZ_F085 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package limited) -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation Dreate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics TC = 25°C (Note 1) RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient, 1in2 copper pad area Ratings 40 ±20 50 Figure4 88 118 0.79 -55 to + 175 1.27 52 Units V V A mJ W W/oC oC oC/W oC/W Package Marking and Ordering Information Device Marking FDD8453LZ Device FDD8453LZ_F085 Package D-PAK(TO-252) Reel Size 13” Electrical Character...