FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode)
November 2013
FDD850N10LD
BoostPak (N-Channel PowerTrenc...
FDD850N10LD — BoostPak (N-Channel PowerTrench®
MOSFET + Diode)
November 2013
FDD850N10LD
BoostPak (N-Channel PowerTrench®
MOSFET + Diode)
100 V, 15.3 A, 75 mΩ
Features
RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A Low Gate Charge (Typ. 22.2 nC) Low Crss (Typ. 42 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability
RoHS Compliant
Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward
voltage drop and excellent switching performance.
Applications
LED Monitor Backlight
LED TV Backlight
LED Lighting
Consumer Appliances, DC-DC converter (Step up & Step down)
3
12 45
3 TO252-5L
1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode
1
Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
IF(AV) IFSM TJ, TSTG TL
Parameter
Drain to Source
Voltage
Gate to Source
Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25oC) - Derate Above 25oC
Diode Average Rectified Forward Current (TC = 138oC)
Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave
Operating and Storage Temperature R...