FDD86581-F085 N-Channel PowerTrench® MOSFET
FDD86581-F085
N-Channel PowerTrench® MOSFET
60 V, 25 A, 15 mΩ
Features
T...
FDD86581-F085 N-Channel PowerTrench®
MOSFET
FDD86581-F085
N-Channel PowerTrench®
MOSFET
60 V, 25 A, 15 mΩ
Features
Typical RDS(on) = 12.3 mΩ at VGS = 10V, ID = 25 A Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems
D G
G
S DTO-P-2A5K2 (TO-252)
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS ID EAS PD
Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Derate Above 25oC
TC = 25°C TC = 25°C
(Note 2)
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
Ratings 60 ±20 25
See Figure 4 14.5 48.4 0.32
-55 to + 175 3.1 52
D
S
Units V V A mJ W
W/oC oC
oC/W oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 60μH, IAS = 22A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface presented here is
of the based
drain pins. RθJC is on mounting...