FDD9510L-F085

MOSFET - P-Channel Logic Level PowerTrench) -40 V, 13.5 mW, -50 A FDD9510L-F085 Features Typ RDS(on) = 11 mW at VGS = −10 V; ID = −50 A Typ Qg(tot) = 28 nC at VGS = −10 V; ID = −50 A UIS Capability Qualified to AEC Q101 These Devices are Pb−Free and are RoHS Compliant Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electrical Power Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (VGS = −10 V) (TC = 25°C) (Note 1) Pulsed Drain Current (TC = 25°C) VDSS −40 V VGS ±16 V ID −50 A ID See A Figure 4 Single Pulse Avalanche Energy (Note 2) Power Dissipation Derate above 25°C Operating and Storage Temperature Range EAS PD PD TJ, TSTG 35.3 75 0.5 −55 to +175 mJ W W/°C °C Thermal Resistance (Junction to Case) Maximum Thermal Resistance (Junction to Ambient) (Note 3) RqJC RqJA 2 °C/W 52 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by wirebond configuration 2. Starting Tj = 25°C, L = 40 mH, IAS = −42 A, VDD = −40 V during inductor charging and VDD = 0 V during time in avalanche 3. RqJA ...