www.DataSheet4U.com
FDFMC2P120
July 2005
FDFMC2P120
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Gener...
www.DataSheet4U.com
FDFMC2P120
July 2005
FDFMC2P120
Integrated P-Channel PowerTrench®
MOSFET and Schottky Diode
General Description
FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench
MOSFET technology with a very low forward
voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge
MOSFET with very low on-state resistance.
Applications
Buck Boost
Features
–2 A, –20 V RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 200 mΩ @ VGS = –2.5 V Low Profile – 0.8mm maximum – in the new package MicroFET 3x3 mm
PIN 1
2
3
TO BOTTOM NC
1 2
6 5
A A
S
6 TOP
5
4
S 3
4 G
BOTTOM
MLP 3x3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID VRRM IO PD TJ, TSTG
TA=25oC unless otherwise noted
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous – Pulsed Schottky Repetitive Peak Reverse
Voltage Schottky Average Forward Current Power Dissipation (Steady State)
(Note 1a)
Ratings
–20 ±12 –3.5 –10 20 2 2.4 1.2 –55 to +150
Units
V V A V A W °C
(Note a) (Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
60 145
°C/W
Package Marking and Ordering Information
Device Marking 2P120 Device FDFMC2P120 Reel Size 7’’ Tape width 12mm Quantity 3000 units
©2005 Fairch...