FDFME3N311ZT

FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode FDFME3N311ZT July 2010 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ Features General Description „ Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A „ Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 1600 V (Note 3) „ RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. Application „ Boost Functions Pin1 D NC A K D S G K TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation for Single Operation Power Dissipation for Single Operation Schottky Repetitive Peak Reverse Voltage TA = 25 °C TA = 25 °C Schottky Average Forward Current Opera...