FDFS2P103
September 2001
FDFS2P103
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The...
FDFS2P103
September 2001
FDFS2P103
Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
General Description
The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench
MOSFET technology with a very low forward
voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge
MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Features
–5.3 A, –30V RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 92 mΩ @ VGS = –4.5 V VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C) Schottky and
MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and
MOSFET pinout for design flexibility
D D C C
A 1 A 2 S 3
G S A
8 C 7 C 6 D 5 D
SO-8
Pin 1
G 4
A
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD
MOSFET Drain-Source
Voltage MOSFET Gate-Source
Voltage Drain Current – Continuous – Pulsed
Parameter
(Note 1a)
Ratings –30 ±25 –5.3 –20
2 1.6 1 0.9
Units
V V A W
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG VRRM IO
Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse
Voltage Schottky Average Forward Current
(Note 1a)
–55 to +150
30 1
°C V A
Package Marking and ...