FDG361N

FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V Low gate charge (3.7nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) Applications Load switch Battery protection Power management S D D G Pin 1 1 2 D D 6 5 4 3 SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 ±20 (Note 1a) Units V V A W °C 0.6 2.0 0.42 0.38 −55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 300 333 °C/W °C/W Package Marking and Ordering Information Device Marking .61 Device FDG361N Reel Size 7’’ Tape width 8mm Quantity 3000 units 2001 ...