July 1999
FDG6301N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode fi...
July 1999
FDG6301N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low
voltage applications as a replacement for bipolar digital transistors and small signal
MOSFETs.
Features
25 V, 0.22 A continuous, 0.65 A peak. RDS(ON) = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package.
SC70-6
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
D1
G2
S2
1 or 4 *
.01
2 or 5
6 or 3
SC70-6
S1
G1
D2
3 or 6
5 or 2
4 or 1 *
*The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
FDG6301N
Units
VDSS VGSS ID PD TJ,TSTG ESD
Drain-Source
Voltage Gate-Source
Voltage Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1)
25 8 0.22 0.65 0.3 -55 to 150 6.0
V V A
W °C kV
Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model(100 pF / 1...