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FDG6303N FET Datasheet PDFDual N-Channel Digital FET Dual N-Channel Digital FET |
　
　
　
| Part Number | FDG6303N |
|---|---|
| Description | Dual N-Channel Digital FET |
| Feature | Digital FET, Dual N-Channel
FDG6303N
G eneral Description These dual N−Chann el logic level enhancement mode field e ffect
transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology. This very high density process is especially tail ored to minimize on−state resistance. This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs. Features â €¢ 25 V, 0. 50 A Continuous, 1. 5 A Peak ♦ RDS(ON) = 0. 45 W @ VGS = 4. 5 V ♦ RDS(ON) = 0. 60 W @ VGS = 2. 7 V • Very Low Level Gate Drive Requir . |
| Manufacture | ON Semiconductor |
| Datasheet |
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| Part Number | FDG6303N |
|---|---|
| Description | Dual N-Channel Digital FET |
| Feature | July 1999
FDG6303N Dual N-Channel, Digi tal FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced u sing Fairchild's proprietary, high cell density, DMOS technology. This very hi gh density process is especially tailor ed to minimize on-state resistance. Thi s device has been designed especially f or low voltage applications as a replac ement for bipolar digital transistors a nd small signal MOSFETs. Features 25 V , 0. 50 A continuous, 1. 5 A peak. RDS(ON ) = 0. 45 Ω @ VGS= 4. 5 V, RDS(ON) =0. 6 0 Ω @ VGS= 2. 7 V. Very low level gate drive requirement . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
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