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FDG6303N FET Datasheet PDF

Dual N-Channel Digital FET

Dual N-Channel Digital FET

 

 

 

Part Number FDG6303N
Description Dual N-Channel Digital FET
Feature Digital FET, Dual N-Channel FDG6303N G eneral Description These dual N−Chann el logic level enhancement mode field e ffect transistors are produced using ON Semiconductor’s proprietary, high ce ll density, DMOS technology.
This very high density process is especially tail ored to minimize on−state resistance.
This device has been designed especial ly for low voltage applications as a re placement for bipolar digital transisto rs and small signal MOSFETs.
Features 25 V, 0.
50 A Continuous, 1.
5 A Peak ♦ RDS(ON) = 0.
45 W @ VGS = 4.
5 V ♦ RDS(ON) = 0.
60 W @ VGS = 2.
7 V
• Very Low Level Gate Drive Requir .
Manufacture ON Semiconductor
Datasheet
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FDG6303N

 

 

 


 

 

 

Part Number FDG6303N
Description Dual N-Channel Digital FET
Feature July 1999 FDG6303N Dual N-Channel, Digi tal FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced u sing Fairchild's proprietary, high cell density, DMOS technology.
This very hi gh density process is especially tailor ed to minimize on-state resistance.
Thi s device has been designed especially f or low voltage applications as a replac ement for bipolar digital transistors a nd small signal MOSFETs.
Features 25 V , 0.
50 A continuous, 1.
5 A peak.
RDS(ON ) = 0.
45 Ω @ VGS= 4.
5 V, RDS(ON) =0.
6 0 Ω @ VGS= 2.
7 V.
Very low level gate drive requirement .
Manufacture Fairchild Semiconductor
Datasheet
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