FDG6308P

FDG6308P January 2001 FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Features –0.6 A, –20 V. RDS(ON) = 0.40 Ω @ VGS = –4.5 V RDS(ON) = 0.55 Ω @ VGS = –2.5 V RDS(ON) = 0.80 Ω @ VGS = –1.8 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. 6 or 3 D 5 or 2 G 4 or 1 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1) PD TJ, TSTG Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size .08 FDG6308P 7’’ Ratings –20 ±8 –0.6 –1.8 0.3 –55 to +150 415 Tape width 8mm Units V V A W °C °C/W Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDG6308P Rev C(W) FDG6308P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Charact...