FDG6316P

FDG6316P December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS = –1.8 V Applications Battery management Load switch Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package D G S S 1 or 4 G 2 or 5 D 3 or 6 6 or 3 D 5 or 2 G 4 or 1 S Pin 1 S G D SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –12 ±8 (Note 1) Units V V A W °C –0.7 –1.8 0.3 –55 to +150 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking .16 Device FDG6316P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDG6316P Rev D W) FDG6316P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parame...