FDG8850NZ Dual N-Channel PowerTrench® MOSFET
April 2007
FDG8850NZ
Dual N-Channel PowerTrench® MOSFET
tm
30V,0.75A,0....
FDG8850NZ Dual N-Channel PowerTrench®
MOSFET
April 2007
FDG8850NZ
Dual N-Channel PowerTrench®
MOSFET
tm
30V,0.75A,0.4Ω
Features
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Very low level gate drive requirements allowing operation
in 3V circuits(VGS(th) <1.5V)
Very small package outline SC70-6
RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low
voltage applications as a replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
G2 D1
S2
SC70-6
Pin 1
D2 G1
S1
Q1 S1
G1 Q2
D2
D1 G2 S2
...