FDH210N08

FDH210N08 — N-Channel UniFETTM MOSFET FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A Low Gate Charge (Typ. 232 nC) Low Crss (Typ. 262 pF) 100% Avalanche Tested Improved dv/dt Capability Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies December 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G D S TO-247 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC Operating and Storage Temperature Range MaximumLead Temperature for Soldering, 1/8 from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Thermal Characteristics ...