FDH400

High Voltage General Purpose Diode FDH400, FDLL400 Features This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) (Notes 1 and 2) Symbol Parameter Value Unit WIV Working Inverse Voltage 150 V IO Average Rectified Forward Current 200 mA IF DC Forward Current 500 mA iF Recurrent Peak Forward Current 600 mA IFSM Non−Repetitive Pulse Width = 1.0 s 1.0 A Peak Forward Current Pulse Width = 1.0 ms 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature 175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 200_C. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Max Symbol Parameter FDH / FDLL400 PD Power Dissipation 500 Derate above 25°C 3.33 RqJA Thermal Resistance, 300 Junction to Ambient Unit mW mW/°C °C/W DATA SHEET www.onsemi.com AXIAL LEAD (DO−35) CASE 017AG MiniMELF / SOD−80 CASE 100AD MARKING DIAGRAM Cathode Band (Black) (1st band denotes cathode terminal and has wider width) ORDERING INFORMATION Device FDLL400 Package Shipping† MiniMELF / SOD−80 2500 /...