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FDH50N50 Datasheet

Part Number FDH50N50
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 500V N-Channel MOSFET
Datasheet FDH50N50 DatasheetFDH50N50 Datasheet (PDF)

FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET October 2008 UniFETTM Features • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially.

  FDH50N50   FDH50N50






Part Number FDH50N50
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDH50N50 DatasheetFDH50N50 Datasheet (PDF)

MOSFET – N-Channel, UniFETt 500 V, 48 A, 105 mW FDH50N50, FDA50N50 Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp balla.

  FDH50N50   FDH50N50







Part Number FDH50N50
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet FDH50N50 DatasheetFDH50N50 Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 192 PD Total Dissipation 625 Tj Operatin.

  FDH50N50   FDH50N50







500V N-Channel MOSFET

FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET October 2008 UniFETTM Features • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. GD S TO-247 FDH Series G DS TO-3PN FDA Series {D z  G{ z z {S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter FDH50N50_F133/FDA50N50 Drain-Source Voltage 500 Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) 48 30.8 192 Gate-Source voltage ±20 Single Pulsed Avalanche Energy (Note 2) 1868 Avalanche Current (Note 1) 48 Repetitive Avalanche Energy (Note 1) 62.5 Peak Diode Recovery dv/dt (Note 3) 4.5 Power Dissipation (TC = 25°C) 625 - Derate above 25°C 5 Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 Thermal.


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