FDH700

FDH700 ULTRA FAST DIODE DISCRETE POWER AND SIGNAL TECHNOLOGIES Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY Absolute Maximum Ratings (note 1) Parameter Storage Temperature Maximum Junction Temperature Total Power Dissipation at 25OC Derate above 25OC Working Inverse Voltage DC Forward Current 0.500 Minimum 12.70 Typ 1.000 CATHODE BAND LOGO FD H7 00 0.022 (0.558) Diameter 0.018 (0.458) Typ 20 mils 0.200 (5.08) 0.120 (3.05) TA = 25OC unless otherwise noted Value -65 to +200 -65 to +175 250 1.67 20 150 Units O O C C mW mW/OC V mA Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired 0.090 (2.28) Diameter 0.060 (1.53) Electrical Characteristics SYM BV IR VF TA = 25OC unless otherwise noted CHARACTERISTICS Breakdown Voltage Reverse Leakage Forward Voltage MIN 30 MAX UNITS V IR TEST CONDITIONS = 5.0 uA 20 V 20 V TA = 150OC 10 uA 100 uA 1.0 mA 10 mA 20 mA 50 mA 50 50 420 520 640 760 810 0.89 500 610 740 900 990 1.25 900 nA uA mV mV mV mV mV V ps VR = VR = IF IF IF IF IF IF = = = = = = TRR CT Reverse Recovery Time IF= IR = 10 mA IRR = 1.0 mA RLoop = 100 Ohm VR = 0 V, f = 1.0 MHz FDH700 - Rev. A Diode Capacitance 1.5 pF © 1999 Fairchild Semiconductor Corporation DISCRETE POWER AND SIGNAL TECHNOLOGIES STANDARD DIGITAL MARKING CRITERIA MAXIMUM CHARACTERS PER LINE: 3 MAXIMUM NUMBER OF LINES: 4 LOGO AND CHARACTERS M & W COUNT AS 2 CHARACTERS ...