FDI025N06

FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm Features RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D GDS TO-262 FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt P...