FDI030N06

FDI030N06 — N-Channel PowerTrench® MOSFET FDI030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ November 2013 Features RDS(on) = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise note. Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) FDI030N06 60 ±20 193* 136* 120 772 1434 6 231 1.54 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature. Pack...