FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench® MOSFET
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FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench®
MOSFET
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench®
MOSFET
60 V, 80 A, 3.8 mΩ
Features
Applications
RDS(on) = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A QG(tot) = 96 nC ( Typ.) @ VGS = 10 V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82584
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies
D
GDS
TO-220
GDS
I2-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
EAS PD TJ, TSTG
Drain to Source
Voltage
Gate to Source
Voltage
Drain Current Continuous (TC < 151oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA
Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. (Note 2)
G
S
FDP038AN06A0 FDI038AN06A0
60 ±20
80 17 Figure 4 625 310 2.07 -55 to 175
Unit
V V
A A A mJ W W/oC oC
0.48 62
oC/W oC/W
©2002 Semiconductor Components Industries, LLC. September-2017,Rev. 3
Publication Order Number: FDP038AN06A0/D
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench®
MOSFET
Package Marking and Ordering Information
Device Marking FDP038AN06A0 FDI038AN06A0
Device FDP038AN06A0 FDI038AN06A0
Package TO-220 I2-PAK
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