FDI150N10

FDI150N10 — N-Channel PowerTrench® MOSFET FDI150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 16 mΩ November 2013 Features RDS(on) = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micor Solar Inverter D GDS I2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDI150N10 100 ±20 57 40 228 132 7.5 110 0.88 -55 to +150 300 FDI150N10 1.13 62.5 Unit V V A...