FDI8441

FDI8441 N-Channel PowerTrench® MOSFET July 2007 FDI8441 N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ Features „ Typ rDS(on) = 2.2mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 215nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ RoHS Compliant Applications „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architectures and VRMs „ Primary Switch for 12V Systems tm ©2007 Fairchild Semiconductor Corporation FDI8441 Rev.C0 1 www.fairchildsemi.com FDI8441 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 160oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature (Note 1) Thermal Characteristics Ratings 40 ±20 80 26 See Figure 4 947 300 2 -55 to 175 Units V V A mJ W W/oC oC RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 2) Thermal Resistance Junction to Ambient, 1in2 copper pad area Package Marking and Ordering Information 0.5 62 43 oC/W oC/W oC/W Device Marking FDI8441 Device FDI8441 Package TO-262AB Reel Size Tube Tape Width NA Quantity 50 units Electrical Characteristics TJ = 25°C unless oth...