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FDI8442

Fairchild Semiconductor

N-Channel MOSFET

FDI8442 N-Channel PowerTrench® MOSFET August 2007 FDI8442 N-Channel PowerTrench® MOSFET 40V, 80A, 2.9mΩ Features „ T...


Fairchild Semiconductor

FDI8442

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FDI8442 N-Channel PowerTrench® MOSFET August 2007 FDI8442 N-Channel PowerTrench® MOSFET 40V, 80A, 2.9mΩ Features „ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 181nC at VGS = 10V „ Low Miller Charge Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Electronic Steering „ Integrated Starter / Alternator „ Qualified to AEC Q101 „ Distributed Power Architectures and VRMs „ RoHS Compliant „ Primary Switch for 12V Systems ©2007 Fairchild Semiconductor Corporation FDI8442 Rev. A 1 www.fairchildsemi.com FDI8442 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC<158oC, VGS = 10V) Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC (Note 1) TJ, TSTG Operating and Storage Temperature Thermal Characteristics Ratings 40 ±20 80 23 See Figure 4 720 254 1.7 -55 to +175 Units V V A mJ W W/oC oC RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Package Marking and Ordering Information (Note 2) 0.59 62 oC/W oC/W Device Marking FDI8442 Device FDI8442 Package TO-262 Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless o...




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