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FDJ1032C
Complementary PowerTrench MOSFET
Description
FDJ1032C Complementary PowerTrench®
MOSFET
F FDJ1032C Complementary PowerTrench®
MOSFET
June 2008 Features ■ Q1 –2.8 A, –20 V. ■ Q2 3.2 A, 20 V. ■ Low gate charge RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ High performance trench technol...
Fairchild Semiconductor
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