FDLL457A

Small Signal Diode FDLL457A / 1N457A ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1) Symbol Rating Value Unit VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non−repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 ms 70 V 200 mA A 1.0 4.0 TSTG Storage Temperature Range −65 to +200 °C TJ Operating Junction Temperature 175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Measured on 8.3 ms single half−sine wave or equivalent square wave. Duty cycle = 4 pulses per minute maximum. THERMAL CHARACTERISTICS Symbol Parameter PD RqJA Power Dissipation Thermal Resistance, Junction−to−Ambient Max Unit 500 mW 350 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Max Unit VR Breakdown IR = 100 mA Voltage 85 − V VF Forward IF = 10 mA − Voltage IF = 100 mA − IR Reverse VR = 60 V − Leakage VR = 60 V, TA = 150°C − CT Total VR = 0, f = 1.0 MHz − Capacitance 1.0 V 1.0 V 25 nA 5.0 mA 6.0 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per...