FDM2452NZ

FDM2452NZ July 2005 FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. Features 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 25 mΩ @ VGS = 2.5 V ESD protection Diode(note 3) Low Profile – 0.8 mm maximum – in the new package MicroFET 2 x 5 mm Applications Li-Ion Battery Pack PIN 1 S1 S1 G1 G2 Bottom Drain Contact 4 Q2 3 G1 S2 5 6 2 1 S1 S2 S2 S2 G2 Q1 Bottom Drain Contact S1 MLP 2x5 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Steady State) Ratings 30 ±12 8.1 30 2.2 0.8 –55 to +150 Units V V A W °C (Note 1a) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 55 145 °C/W Package Marking and Ordering Information Device Marking 2452Z Device FDM2452NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units ©2005 Fairchild Semiconductor Corporation FDM2452NZ Rev C1 FDM2452NZ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unle...