FDM3622

MOSFET – N-Channel, POWERTRENCH) 100 V, 4.4 A, 60 mW FDM3622 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) This Device is Pb−Free, Halide Free and is RoHS Compliant MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed 100 V ±20 V A 4.4 20 EAS Single Pulse Avalanche Energy (Note 3) 54 mJ PD Power Dissipation (Note 1a) (Note 1b) W 2.1 0.9 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit RqJC Thermal Resistance, Junction to Case (Note 1) 3.0 °C/W RqJA Thermal Resistance, Junction to Ambient 60 (Note 1a) DATA SHEET www.onsemi.com VDS 100 V rDS(on) MAX 60 mW...