FDM606P

FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench® MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features Fast switching rDS(ON) = 0.026Ω (Typ), VGS = -4.5V rDS(ON) = 0.033Ω (Typ), VGS = -2.5V rDS(ON) = 0.052Ω (Typ), VGS = -1.8V Applications Load switch Battery charge Battery disconnect circuits D Bottomview 3 X 2 (8 Lead) SinglePad ShortPin D G D D 1 2 8 7 6 5 1 D D D 3 4 S S MicroFET 3x2-8 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = - 4.5V) ID Continuous (TC = 100 C, VGS = - 2.5V) Continuous (TC = 100oC, VGS = -1.8V) Pulsed PD TJ, TSTG Power dissipation Derate above 25°C Operating and Storage Temperature o Ratings -20 ±8 -6.8 -3.8 -3.0 Figure 4 1.92 15.4 -55 to 150 Units V V A A A W mW/oC o C Thermal Characteristics Rθ JC Rθ JA Thermal Resistance Junction to Case (Note1) Thermal Resistance Junction to Ambient (Note 2) 6.0 65 oC/W o C/W Package Marking and Ordering Information Device Marking .06P Device FDM606P Package MicroFET3x2 Reel Size 178 mm Tape Width 8 mm Quantity 3000 ©2002 Fairchild Semiconductor Corporation FDM60...