FDMA1024NZ

FDMA1024NZ Dual N-Channel Power Trench® MOSFET May 2009 FDMA1024NZ www.datasheet4u.com Dual N-Channel PowerTrench® MOSFET 20 V, 5.0 A, 54 mΩ Features „ Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A „ Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A „ Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A „ Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ HBM ESD protection level = 1.6 kV (Note 3) „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant „ Free from halogenated compounds and antimony oxides Applications „ Baseband Switch „ Loadswitch „ DC-DC Conversion PIN 1 S1 G1 D2 S1 1 2 3 6 5 4 D1 G2 S2 D1 D2 G1 D2 D1 MicroFET 2x2 G2 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 20 ±8 5.0 6.0 1.4 0.7 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA RθJA RθJA Ther...