FDMA1025P

FDMA1025P Dual P-Channel PowerTrench® MOSFET FDMA1025P Dual P-Channel PowerTrench® MOSFET –20V, –3.1A, 155m: Features General Description July 2014 „ Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A „ Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A „ Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm „ RoHS Compliant „ Free from halogenated compounds and antimony oxides This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and well suited to linear mode applications. Application „ DC - DC Conversion PIN 1 S1 G1 D2 D1 D2 S1 1 G1 2 1 6 6 D1 5 G2 5 2 D1 G2 S2 MicroFET 2X2 D2 3 3 4 4 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings –20 ±12 –3.1 –6 1.4 0.7 –55 to +150 Units V V A W °C RTJA RTJA RTJA RTJA Thermal Resistance Single Operation, Junction to Ambient ...