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FDMA1027PT Datasheet

Part Number FDMA1027PT
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual P-Channel MOSFET
Datasheet FDMA1027PT DatasheetFDMA1027PT Datasheet (PDF)

FDMA1027PT Dual P-Channel PowerTrench® MOSFET September 2008 FDMA1027PT Dual P-Channel PowerTrench® MOSFET www.datasheet4u.com –20 V, –3 A, 120 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi.

  FDMA1027PT   FDMA1027PT






Part Number FDMA1027P
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual P-Channel MOSFET
Datasheet FDMA1027PT DatasheetFDMA1027P Datasheet (PDF)

MOSFET – Dual, P-Channel, POWERTRENCH) -20 V, -3.0 A, 120 mW FDMA1027P General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. When connected in the typical common source configuration, bi−directional current flow is possible. The MicroFET t 2x2 package offers exceptional t.

  FDMA1027PT   FDMA1027PT







Part Number FDMA1027P
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual P-Channel PowerTrench MOSFET
Datasheet FDMA1027PT DatasheetFDMA1027P Datasheet (PDF)

FDMA1027P Dual P-Channel PowerTrench® MOSFET October 2005 FDMA1027P Dual P-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2.

  FDMA1027PT   FDMA1027PT







Dual P-Channel MOSFET

FDMA1027PT Dual P-Channel PowerTrench® MOSFET September 2008 FDMA1027PT Dual P-Channel PowerTrench® MOSFET www.datasheet4u.com –20 V, –3 A, 120 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. tm „ Max rDS(on) = 120 mΩ at VGS = -4.5 V, ID = -3.0 A „ Max rDS(on) = 160 mΩ at VGS = -2.5 V, ID = -2.5 A „ Max rDS(on) = 240 mΩ at VGS = -1.8 V, ID = -1.0 A „ Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin „ RoHS Compliant Applications „ Battery management „ Load switch „ Battery protection PIN 1 S1 G1 D2 D1 D2 S1 G1 D1 G2 S2 MicroFET 2X2 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed PD TJ, TSTG Power Dissipation for Single Operation Power Dissipation for Single Operation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings -20 ±8 -3 -6 1.4 0.7 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal C.


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