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FDMA1028NZ Datasheet

Part Number FDMA1028NZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N-Channel Power MOSFET
Datasheet FDMA1028NZ DatasheetFDMA1028NZ Datasheet (PDF)

FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode ap.

  FDMA1028NZ   FDMA1028NZ






Part Number FDMA1028NZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N-Channel PowerTrench MOSFET
Datasheet FDMA1028NZ DatasheetFDMA1028NZ Datasheet (PDF)

www.DataSheet4U.com FDMA1028NZ Dual N-Channel PowerTrench® MOSFET May 2006 FDMA1028NZ Dual N-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is .

  FDMA1028NZ   FDMA1028NZ







Dual N-Channel Power MOSFET

FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D2 Features „x 3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V RDS(ON) = 86 m: @ VGS = 2.5V „x Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm „x HBM ESD protection level > 2kV (Note 3) „x RoHS Compliant „ Free from halogenated compounds and antimony oxides D1 D2 S1 1 6 D1 G1 2 5 G2 D1 G2 S2 MicroFET 2x2 D2 3 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDS VGS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 20 r12 3.7 6 1.4 0.7 –55 to +150 4 S2 Units V V A W qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient RTJA Thermal Resistance, Junction-to-Ambient RTJA Thermal Resistance, Junction-to-Ambient RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single Operation) 173 (Si.


2023-01-24 : NTMFS034N15MC    FDS9431A    NVMYS003N08LH    FDD86069-F085    FDD86581-F085    FDB8870-F085    FDP8870-F085    NVMJD015N06CL    NTTFS012N10MD    FDMA1028NZ   


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