FDMA291P

www.DataSheet4U.com FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET May 2006 May 2006 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 Drain Source D 1 D 2 G 3 Bottom Drain Contact Features –6.6 A, –20V. rDS(ON) = 42 mΩ @ VGS = –4.5V rDS(ON) = 58 mΩ @ VGS = –2.5V rDS(ON) = 98 mΩ @ VGS = –1.8V Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm 6 D 5 D 4 S MicroFET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –6.6 –24 2.4 0.9 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 291 Device FDMA291P Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2006 Fairchild Semiconductor Corporation FDMA291P Rev B (W) FDMA291P Single P-Channel 1.8V Specif...