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FDMA3023PZ Datasheet

Part Number FDMA3023PZ
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual P-Channel MOSFET
Datasheet FDMA3023PZ DatasheetFDMA3023PZ Datasheet (PDF)

MOSFET – Dual, P-Channel, POWERTRENCH) 30 V, -29 A, 90 mW FDMA3023PZ Description This Device is Designed Specifically as a Single Package Solution for the battery charge switch in cellular handset and other Ultra−Portable Applications. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. When connected in the typical common source configuration, bi−directional current flow is possible. The MicroFET 2X2 Package Offers Exceptional Thermal Perfo.

  FDMA3023PZ   FDMA3023PZ






Part Number FDMA3023PZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDMA3023PZ DatasheetFDMA3023PZ Datasheet (PDF)

FDMA3023PZ Dual P-Channel PowerTrench® MOSFET December 2008 FDMA3023PZ Dual P-Channel PowerTrench® MOSFET -30 V, -2.9 A, 90 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current.

  FDMA3023PZ   FDMA3023PZ







Dual P-Channel MOSFET

MOSFET – Dual, P-Channel, POWERTRENCH) 30 V, -29 A, 90 mW FDMA3023PZ Description This Device is Designed Specifically as a Single Package Solution for the battery charge switch in cellular handset and other Ultra−Portable Applications. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses. When connected in the typical common source configuration, bi−directional current flow is possible. The MicroFET 2X2 Package Offers Exceptional Thermal Performance for its physical size and is well suited to linear mode applications. Features • Max RDS(on) = 90 mW at VGS = −4.5 V, ID = −2.9 A • Max RDS(on) = 130 mW at VGS = −2.5 V, ID = −2.6 A • Max RDS(on) = 170 mW at VGS = −1.8 V, ID = −1.7 A • Max RDS(on) = 240 mW at VGS = −1.5 V, ID = −1.0 A • Low Profile − 0.8 mm Maximum − in the New Package MicroFET™ 2x2 mm • HBM ESD Protection > 2 kV (Note 3) • These Devices is Pb−Free, Halide Free and is RoHS Compliant • Free From Halogenated Compounds and Antimony Oxides ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current − Continuous (Note 1a) − Pulsed −30 V ±8 V A −2.9 −6 PD Power Dissipation TA = 25°C (Note 1a) 1.4 W Power Dissipation TA = 25°C 0.7 (Note 1b) TJ, Tstg Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device..


2023-12-19 : NC7WZ07    FDMC89521L    FDMC8854    FDMC8882    FDMC86570LET60    FDMC86570L    FDMC86520L    FDMC8651    FDMC86340ET80    FDMC86340   


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