FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET
September 2008
FDMA410NZ
www.datasheet4u.com
tm
Singl...
FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench®
MOSFET
September 2008
FDMA410NZ
www.datasheet4u.com
tm
Single N-Channel 1.5 V Specified PowerTrench
MOSFET
20 V, 9.5 A, 23 mΩ
Features
Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A HBM ESD protection level > 2.5 kV (Note 3) Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm RoHS Compliant
®
General Description
This Single N-Channel
MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Applications
Li-lon Battery Pack
Pin 1
D
D
G
Bottom Drain Contact D D 1 2 3 6 5 4 D D
Drain
Source
G
S
D
D
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source
Voltage Gate to Source
Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings 20 ±8 9.5 24 2.4 0.9 -55 to +150 Units V V A W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W
Package Marking and Ordering Information
Device Marking 410 Device FDMA410NZ Package MicroFET 2X2 Reel Size 7 ...