FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
September 2006
FDMA420NZ
Single N-Channel 2.5V Specified...
FDMA420NZ Single N-Channel 2.5V Specified PowerTrench®
MOSFET
September 2006
FDMA420NZ
Single N-Channel 2.5V Specified 20V, 5.7A, 30mΩ
General Description
This Single N-Channel
MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
PowerTrench®
MOSFET
Features
RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A
tm
Applications
Li-lon Battery Pack
Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm RoHS Compliant
Pin 1
D
D
G Source S D D
4 3
www.DataSheet4U.com
Drain
G D D
5
2
6
1
D
D
S
Bottom Drain Contact
MicroFET Bottom View 2X2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current -Continuous -Pulsed (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±12 5.7 24 0.9 2.4 -55 to +150 Units V V A W
o
Power dissipation (Steady State) Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 145 52
o
C/W
Package Marking and Ordering Information
Device Marking 420 Device FDMA420NZ Reel Size 7”
1
Tape Width 12mm
Quantity 3000 units
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation FDMA420NZ Rev B1
FDMA420NZ Single N-Channel 2.5V specified PowerTrench®
MOSFET
Electrical Characteri...