FDMA8878

FDMA8878 Single N-Channel Power Trench® MOSFET May 2012 FDMA8878 Single N-Channel Power Trench® MOSFET 30 V, 9.0 A, 16 mΩ Features „ Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A „ Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance. Application „ DC/DC Buck Converters „ Load Switch in NB „ Notebook Battery Power Management Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TC = 25 °C TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 10 9.0 40 2.4 0.9 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 878 Device FDMA8878 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev.C 1...