FDMC2512SDC

FDMC2512SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM July 2015 FDMC2512SDC N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25 V, 40 A, 2.0 mΩ Features „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification „ High End Server/Workstation Vcore Low Side Pin 1 G S S S D5 D6 4G 3S D D D D Top Dual CoolTM 33 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS dv/dt PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range T...