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FDMC3612 Datasheet

Part Number FDMC3612
Manufacturers Kexin
Logo Kexin
Description N-Channel MOSFET
Datasheet FDMC3612 DatasheetFDMC3612 Datasheet (PDF)

SMD Type N-Channel MOSFET FDMC3612 (KDMC3612) MOSFET ■ Features ● VDS (V) = 100V ● ID = 12A ● RDS(ON) < 110mΩ (VGS = 10V) ● RDS(ON) < 122mΩ (VGS = 6V) ● Low Profile - 1 mm max in Power 33 D5 D6 D7 D8 4G 3S 2S 1S DFN 3X3 Top 8765 1 234 Bottom DDD D GS S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ (Package limited) Continuous Drain Current -Continuous Tc=25℃ (Silicon limited) Ta=25℃ (Note.1) Continuous Drain Current -Pulsed Sin.

  FDMC3612   FDMC3612






Part Number FDMC3612
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDMC3612 DatasheetFDMC3612 Datasheet (PDF)

MOSFET – N-Channel, POWERTRENCH) 100 V, 12 A, 110 mW FDMC3612, FDMC3612-L701 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A • Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A • Low Profile − 1 mm Max in Power 33 • 100% UIL Tested • These Devices are Pb−Free and are RoHS Comp.

  FDMC3612   FDMC3612







Part Number FDMC3612
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Datasheet FDMC3612 DatasheetFDMC3612 Datasheet (PDF)

FDMC3612 N-Channel PowerTrench® MOSFET FDMC3612 N-Channel Power Trench® MOSFET 100 V, 12 A, 110 mΩ February 2012 Features General Description „ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A „ Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain.

  FDMC3612   FDMC3612







N-Channel MOSFET

SMD Type N-Channel MOSFET FDMC3612 (KDMC3612) MOSFET ■ Features ● VDS (V) = 100V ● ID = 12A ● RDS(ON) < 110mΩ (VGS = 10V) ● RDS(ON) < 122mΩ (VGS = 6V) ● Low Profile - 1 mm max in Power 33 D5 D6 D7 D8 4G 3S 2S 1S DFN 3X3 Top 8765 1 234 Bottom DDD D GS S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Tc=25℃ (Package limited) Continuous Drain Current -Continuous Tc=25℃ (Silicon limited) Ta=25℃ (Note.1) Continuous Drain Current -Pulsed Single Pulse Avalanche Energy (Note.2) Power Dissipation Tc=25℃ Ta=25℃ (Note.1) Thermal Resistance.Junction- to-Ambient (Note.1) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID EAS PD RthJA RthJC TJ Tstg Note.1: 53 °C/W when mounted on a 1 in2 pad of 2 oz copper Note.2: Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V. Rating 100 ±20 16 12 3.3 15 32 35 2.3 53 3.5 150 -55 to 150 U.


2016-11-13 : 59630    SDP501    FDMS7650DC    FDMS2502SDC    FDMC7672S    FDMC7660DC    FDMC3612    FDMC3612    FDMC3020DC    FDMC2514SDC   


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