FDMC612PZ

FDMC612PZ P-Channel PowerTrench® MOSFET FDMC612PZ P-Channel PowerTrench® MOSFET -20 V, -14 A, 8.4 mΩ October 2013 Features General Description „ Max rDS(on) = 8.4 mΩ at VGS = -4.5 V, ID = -14 A „ Max rDS(on) = 13 mΩ at VGS = -2.5 V, ID = -11 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Termination is Lead-free and RoHS Compliant „ HBM ESD capability level > 3.6 KV typical (Note 4) This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness. Applications „ Battery Management „ Load Switch 8765 DD D D S D SD Pin 1 SD 1 234 Top GS S S Bottom Pin 1 G D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -...